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Updated: Apr 28, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

Jaekyun Kim, Yong-Hee Cho, Dong-Su Ko

    Optics Express
    |June 13, 2014
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