Strain engineering of perovskite thin films using a single substrate

Combining temperature-dependent x-ray diffraction, Raman spectroscopy and first-principles-based effective Hamiltonian calculations, we show that varying the thickness of (Ba0.8Sr0.2)TiO3 (BST) thin films deposited on the same single substrate (namely, MgO) enables us to change not only the magnitude but also the sign of the misfit strain. Such previously overlooked control of the strain allows several properties of these films (e.g. Curie temperature, symmetry of ferroelectric phases, dielectric response) to be tuned and even optimized. Surprisingly, such desired control of the strain (and of the resulting properties) originates from an effect that is commonly believed to be detrimental to functionalities of films, namely the existence of misfit dislocations. The present study therefore provides a novel route to strain engineering, as well as leading us to revisit common beliefs.