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Crystal Growth: Principles of Crystallization

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Crystallization is a phase transformation process in which crystals are precipitated from a supersaturated solution or formed from other sources. During crystallization, atoms or molecules arrange themselves into a well-defined, rigid crystal lattice to minimize energy.
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Related Experiment Video

Updated: Apr 27, 2026

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

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Published on: May 11, 2019

InPBi single crystals grown by molecular beam epitaxy.

K Wang¹, Y Gu¹, H F Zhou¹

¹State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.

Scientific Reports

|June 27, 2014

Summary

This summary is machine-generated.

Researchers successfully synthesized InPBi single crystals, a robust infrared optoelectronic material previously thought difficult to grow. This breakthrough opens new possibilities for advanced semiconductor heterostructures.

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Published on: May 11, 2019

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Published on: October 23, 2018

Area of Science:

Materials Science
Semiconductor Physics
Optoelectronics

Background:

Indium phosphide bismuthide (InPBi) was theoretically predicted as a highly robust infrared optoelectronic material.
Previous research indicated significant challenges in synthesizing InPBi beyond typical doping concentrations.

Purpose of the Study:

To achieve the first successful synthesis of InPBi single crystals with a high bismuth (Bi) concentration.
To characterize the structural, surface, and optical properties of the synthesized InPBi.
To explore the potential of InPBi as a novel III-V compound for heterostructure applications.

Main Methods:

Gas source molecular beam epitaxy (GSMBE) was employed for crystal growth.
X-ray diffraction and microscopy techniques were used for structural and surface analysis.
Optical absorption and photoluminescence spectroscopy were performed for optical characterization.

Main Results:

Successful growth of InPBi single crystals with a high Bi concentration (2.4 ± 0.4%).
High crystalline quality with 94 ± 5% of Bi atoms occupying substitutional sites.
Measured band gap of 1.23 eV at room temperature.
Observed strong and broad photoluminescence emission from 1.4 to 2.7 μm, deviating from current theoretical models.

Conclusions:

InPBi is a viable and promising new material within the III-V semiconductor family.
The synthesized InPBi thin films exhibit excellent material qualities suitable for heterostructures.
The unexpected photoluminescence properties necessitate further theoretical investigation.