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Published on: July 1, 2020
Abnormal drop in electrical resistivity with impurity doping of single-crystal Ag
Ji Young Kim1, Min-Wook Oh2, Seunghun Lee3
11] Department of Nano Fusion Technology, Pusan National University, Miryang, 627-706, Republic of Korea [2].
Abstract:
Resistivity is an intrinsic feature that specifies the electrical properties of a material and depends on electron-phonon scattering near room temperature. Reducing the resistivity of a metal to its potentially lowest value requires eliminating grain boundaries and impurities, but to date few studies have focused on reducing the intrinsic resistivity of a pure metal itself. We could reduce the intrinsic resistivity of single-crystal Ag, which has an almost perfect structure, by impurity doping it with Cu. This paper presents our results: resistivity was reduced to 1.35 μΩ · cm at room temperature after 3 mol% Cu-doping of single-crystal Ag. Various mechanisms were examined in an attempt to explain the abnormal behavior.
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