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Room temperature electrically injected polariton laser.

Pallab Bhattacharya1, Thomas Frost1, Saniya Deshpande1

  • 1Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USA.

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Summary

Researchers achieved room-temperature, electrically pumped polariton lasing in a Gallium Nitride (GaN) microcavity diode. This breakthrough occurred at a low threshold, distinct from conventional photon lasing.

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Area of Science:

  • Optoelectronics
  • Condensed Matter Physics
  • Materials Science

Background:

  • Polariton lasing offers a low-threshold alternative to traditional lasing.
  • Gallium Nitride (GaN) is a promising material for optoelectronic devices.

Purpose of the Study:

  • To demonstrate room-temperature, electrically pumped inversionless polariton lasing in a bulk GaN microcavity diode.
  • To characterize the polariton lasing threshold and compare it with conventional photon lasing.

Main Methods:

  • Fabrication of a bulk GaN-based microcavity diode.
  • Electrical pumping and optical measurements at room temperature.
  • Angle-resolved luminescence, coherence, and polarization measurements.

Main Results:

  • Observation of electrically pumped inversionless polariton lasing at room temperature.
  • Low nonlinear threshold of 169 A/cm(2) for polariton lasing.
  • Distinct second threshold at 44 kA/cm(2) for conventional photon lasing.

Conclusions:

  • Room-temperature polariton lasing is achievable in GaN microcavities via electrical pumping.
  • The low threshold highlights the potential for efficient polaritonic devices.
  • The study provides a comprehensive characterization of polariton condensation in momentum space.