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Graphene based low insertion loss electro-absorption modulator on SOI waveguide.

Muhammad Mohsin, Daniel Schall, Martin Otto

    Optics Express
    |July 1, 2014
    PubMed
    Summary
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    Researchers developed a graphene electro-absorption modulator on silicon, achieving a 16 dB modulation depth with low 3.3 dB insertion loss. This breakthrough offers a promising solution for broadband opto-electronics applications.

    Area of Science:

    • Optoelectronics
    • Materials Science
    • Nanotechnology

    Background:

    • Graphene's unique linear and gapless band structure makes it a promising material for optoelectronics.
    • The electrical tunability of graphene's optical conductivity via Fermi level shifting is a key characteristic.

    Purpose of the Study:

    • To experimentally demonstrate a graphene-based electro-absorption modulator.
    • To achieve very low insertion loss in an optoelectronic modulator using graphene.

    Main Methods:

    • Fabrication of a graphene-based electro-absorption modulator on a silicon-on-insulator (SOI) waveguide.
    • Operation and characterization of the modulator at a 1550 nm wavelength.

    Main Results:

    • The modulator achieved a modulation depth of 16 dB.

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  • The device exhibited a low insertion loss of 3.3 dB.
  • Performance surpassed existing Germanium-Silicon (GeSi) and prior graphene modulators.

    • Conclusions:

    • Graphene electro-absorption modulators offer competitive performance compared to silicon Mach-Zehnder interferometers.
    • The demonstrated device represents a significant advancement in low-loss, tunable optoelectronic modulators.