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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
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CMOS-compatible hybrid plasmonic modulator based on vanadium dioxide insulator-metal phase transition
Optics Letters
|July 1, 2014
Summary
This study introduces a novel silicon photonics modulator using vanadium dioxide (VO₂) phase transition. The device offers efficient optical modulation compatible with CMOS technology.
Area of Science:
- Photonics
- Materials Science
- Electrical Engineering
Background:
- Silicon photonics is crucial for optical communication.
- Vanadium dioxide (VO₂) exhibits a unique insulator-metal phase transition.
- Integrating novel materials into silicon photonics enhances device performance.
Purpose of the Study:
- To develop a CMOS-compatible hybrid plasmonic modulator.
- To leverage the phase transition of VO₂ for optical modulation.
- To extend the application of VO₂ in silicon photonics.
Main Methods:
- Designed a hybrid plasmonic waveguide using a directional coupler (Si-SiO₂-VO₂-SiO₂-Si).
- Utilized the insulator-metal phase transition of VO₂ triggered by electrical voltage.
- Integrated the hybrid waveguide into a silicon photonics platform.
Main Results:
- Achieved electrical modulation of optical power by switching VO₂ phase.
- Demonstrated a VO₂-based modulator with a driving voltage of 2 V.
- Obtained an on/off extinction ratio exceeding 3.0 dB across the C-band.
Conclusions:
- The proposed hybrid plasmonic modulator is CMOS-compatible.
- VO₂ phase transition is an effective mechanism for optical modulation in silicon photonics.
- This technology shows promise for advanced optical communication devices.
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