Ferromagnetism
Biasing of Metal-Semiconductor Junctions
Valence Bond Theory
Colors and Magnetism
Biasing of FET
Metal-Semiconductor Junctions
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Updated: Apr 27, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
C Becher1, M Trassin2, M Lilienblum1
1Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland.
Researchers developed a method to control symmetry in ferroic trilayer structures after growth. This allows for tunable symmetry in devices, enabling reversible control of functionalities like light emission.
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