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Updated: Apr 27, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Tuning and identification of interband transitions in monolayer and bilayer molybdenum disulfide using hydrostatic
Xiuming Dou1, Kun Ding, Desheng Jiang
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
Abstract:
Few-layer molybdenum disulfide (MoS2) is advantageous for application in next-generation electronic and optoelectronic devices. For monolayer MoS2, it has been established that both the conduction band minimum (CBM) and the valence band maximum (VBM) occur at the K point in the Brillouin zone. For bilayer MoS2, it is known that the VBM occurs at the Γ point. However, whether the K valley or the Λ valley forms the CBM and the energy difference between them remain disputable. Theoretical calculations have not provided a conclusive answer. In this paper, we demonstrate that a direct K-K to an indirect Λ-K interband transition in bilayer MoS2 can be optically detected by tuning the hydrostatic pressure. A changeover of the CBM from the K valley to the Λ valley is observed to occur under a pressure of approximately 1.5 GPa. The experimental results clearly indicate that the K valley forms the CBM under zero strain, while the Λ valley is approximately 89 ± 9 meV higher in energy.
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