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Covalence and ionicity in MgAgAs-type compounds.

David Bende1, Yuri Grin, Frank R Wagner

  • 1Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Strasse 40, 01187 Dresden (Germany), Fax: (+49) 351-4646-4002.

Chemistry (Weinheim an Der Bergstrasse, Germany)
|July 4, 2014
PubMed
Summary

This study reveals that ionic and covalent bonding patterns determine atomic arrangements in MgAgAs-type half-Heusler compounds. These findings help predict and understand structural variations in these materials.

Keywords:
QTAIMbond theorydensity functional calculationshalf-Heusler phasessemiconductorssolid-state structures

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Area of Science:

  • Solid State Chemistry
  • Computational Materials Science
  • Crystallography

Background:

  • MgAgAs-type compounds exhibit two known atomic arrangements.
  • The favored arrangement often correlates with the number of transition metal components.

Purpose of the Study:

  • To investigate the underlying bonding mechanisms governing atomic arrangements in MgAgAs-type compounds.
  • To rationalize the energetic preferences of different structural variants using computational methods.

Main Methods:

  • Density Functional Theory (DFT) calculations were performed for 20 eight- and eighteen-valence-electron compounds.
  • Two bonding measures were employed: Madelung energy (ionic interactions) and delocalization indices (covalent interactions).

Main Results:

  • Two distinct bonding patterns were identified as key determinants of structural variants.
  • Madelung energy quantifies ionic contributions, while delocalization indices measure covalent electron sharing.
  • The energetic sequence of atomic arrangements was successfully rationalized for all compounds.

Conclusions:

  • The study provides a systematic approach to understanding and predicting atomic arrangements in MgAgAs-type compounds.
  • A scenario is predicted where an unusual atomic arrangement becomes energetically favorable, offering new material design possibilities.