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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Matthew Yankowitz1, Jiamin Xue, B J LeRoy
1Physics Department, University of Arizona, Tucson, AZ 85721, USA.
Graphene on hexagonal boron nitride offers a clean platform for advanced electronics and fundamental physics. Scanning tunneling microscopy reveals new phenomena in these high-quality graphene devices.
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