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Updated: Apr 27, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Conductivity of Si(111)-(7×7): the role of a single atomic step
Bruno V C Martins1, Manuel Smeu2, Lucian Livadaru3
1National Institute for Nanotechnology, National Research Council of Canada, Edmonton, Alberta, Canada T6G2M9 and Department of Physics, University of Alberta, Edmonton, Alberta, Canada T6G 2E1.
Abstract:
While it is known that the Si-(7×7) is a conducting surface, measured conductivity values differ by 7 orders of magnitude. Here we report a combined STM and transport method capable of surface conductivity measurement of step-free or single-step containing surface regions and having minimal interaction with the sample, and by which we quantitatively determine the intrinsic conductivity of the Si-(7×7) surface. We found that a single step has a conductivity per unit length about 50 times smaller than the flat surface. Our first principles quantum transport calculations confirm and lend insight into the experimental observation.
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