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Updated: Apr 27, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Scaling theory of electric-field-assisted tunnelling
Thomas C T Michaels1, H Cabrera2, D A Zanin2
1Department of Chemistry , University of Cambridge , Lensfield Road, Cambridge CB2 1EW, UK.
Abstract:
Recent experiments report the current (I) versus voltage (V) characteristics of a tunnel junction consisting of a metallic tip placed at a distance d from a planar electrode, d varying over six orders of magnitude, from few nanometres to few millimetres. In the 'electric-field-assisted' (or 'field emission') regime, as opposed to the direct tunnelling regime used in conventional scanning tunnelling microscopy, all I-V curves are found to collapse onto one single graph when d is suitably rescaled, suggesting that the current I=I(V,d) is in reality a generalized homogeneous function of one single variable, i.e. [Formula: see text], where λ being some characteristic exponent and [Formula: see text] being a scaling function. In this paper, we provide a comprehensive explanation-based on analytical arguments, numerical simulations and further experimental results-for the scaling behaviour that we show to emerge for a variety of tip-plane geometries and thus seems to be a general feature of electric-field-assisted tunnelling.
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