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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Michael Hilke1, Mathieu Massicotte2, Eric Whiteway1
1Department of Physics, McGill University, Montreal, QC, Canada H3A 2T8.
This study unifies weak and strong localization in graphene monolayers, revealing a minimum in localization length similar to conductivity minimums. Magnetotransport in graphene devices is comprehensively analyzed.
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