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Updated: Apr 27, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
The seeded growth of graphene
Jae-Kap Lee1, Sohyung Lee2, Yong-Il Kim3
1Interface Control Research Center, Korea Institute of Science and Technology (KIST), Seoul 130-650, Korea.
Abstract:
In this paper, we demonstrate the seeded growth of graphene under a plasma chemical vapor deposition condition. First, we fabricate graphene nanopowders (~5 nm) by ball-milling commercial multi-wall carbon nanotubes. The graphene nanoparticles were subsequently subject to a direct current plasma generated in a 100 Torr 10%CH4 - 90%H2 gas mixture. The plasma growth enlarged, over one hour, the nuclei to graphene sheets larger than one hundred nm(2) in area. Characterization by electron and X-ray diffraction, high-resolution transmission electron microscopy images provide evidence for the presence of monolayer graphene sheets.

