Damage behavior and atomic migration in MgAl2O4 under an 80 keV scanning focused probe in a STEM

Guo-Zhen Zhu1, Gianluigi A Botton2

  • 1Shanghai Key Laboratory of Advanced High Temperature Materials and Precision Forming, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; Canadian Centre of Electron Microscopy and Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada.

Micron (Oxford, England : 1993)
|July 22, 2014
PubMed