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Dual-wavelength Y-branch distributed Bragg reflector diode laser at 785 nanometers for shifted excitation Raman
Martin Maiwald1, Bernd Eppich1, Jörg Fricke1
1Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany.
Abstract:
A dual-wavelength Y-branch distributed Bragg reflector (DBR) diode laser at 785 nm is presented as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS). The monolithic device was realized with deeply etched surface DBR gratings using one-step epitaxy. An optical output power of 140 mW was obtained in continuous-wave (CW) operation for each laser cavity, with emission wavelengths of the device at 784.50 and 785.12 nm. A spectral width of the laser emission of 30 pm (0.5 cm(-1)), including 95% of optical power, was measured. The mean spectral distance of both excitation lines is 0.63 nm (10.2 cm(-1)) over the whole operating range. Raman experiments using polystyrene as the test sample and ambient light as the interference source were carried out and demonstrate the suitability of the dual-wavelength diode laser for SERDS.
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