Related Experiment Video
Updated: Apr 26, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Experimental realization of a three-dimensional Dirac semimetal
Sergey Borisenko1, Quinn Gibson2, Danil Evtushinsky1
1Institute for Solid State Research, IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany.
Researchers directly observed the three-dimensional (3D) Dirac semimetal phase in cadmium arsenide (Cd(3)As(2)). This finding explains the material's high electron mobility and offers potential for novel electronic applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Physics
Background:
- The existence of three-dimensional (3D) Dirac semimetals has been theoretically predicted but experimentally elusive.
- Cadmium arsenide (Cd(3)As(2)) is a material with potential for unique electronic properties.
Purpose of the Study:
- To directly observe the 3D Dirac semimetal phase in cadmium arsenide (Cd(3)As(2)).
- To investigate the electronic structure responsible for Cd(3)As(2)'s high electron mobility.
Main Methods:
- Angle-resolved photoemission spectroscopy (ARPES) was employed for direct observation.
- Analysis focused on identifying specific momentum regions and electronic state dispersions.
Main Results:
- Direct observation of the 3D Dirac semimetal phase in Cd(3)As(2).
- Identification of two momentum regions with narrow, conelike electronic state dispersions, confirming 3D Dirac points.
- The observed electronic structure correlates with Cd(3)As(2)'s exceptionally high bulk electron mobility.
Conclusions:
- The experimental realization of the 3D Dirac semimetal phase in Cd(3)As(2) is confirmed.
- This discovery provides a platform for exploring applications and engineering topological phases, such as Weyl semimetals and quantum spin Hall systems.
More Related Videos
13:56Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Related Concept Videos
Theory of Metallic Conduction
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...