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Ionic field effect and memristive phenomena in single-point ferroelectric domain switching
Anton V Ievlev1, Anna N Morozovska2, Eugene A Eliseev3
1The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, Tennessee 37831, USA.
Nature Communications
|July 29, 2014
Summary
This study reveals ferroelectric domain switching can create diverse shapes beyond simple cylinders. Surface charge dynamics, not just electric fields, influence these complex patterns and can even cause switching against the field.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Ferroelectric materials are crucial for information technology, materials science, and optoelectronics.
- Polarization switching is key to ferroelectric functionality, typically understood via tip-induced domain switching.
- Current models assume uniform screening, not affecting switching behavior.
Purpose of the Study:
- To investigate the diverse domain morphologies resulting from single-point tip-induced polarization switching.
- To explore the role of surface screening charge dynamics in ferroelectric domain switching.
- To understand anomalous switching behaviors, including switching against the electric field.
Main Methods:
- Utilizing scanning probe microscopy for single-point tip-induced polarization switching experiments.
- Analyzing the resulting domain morphologies and their characteristics.
- Investigating the influence of surface screening charge dynamics on switching behavior.
Main Results:
- Demonstrated a broad range of domain morphologies beyond cylindrical shapes, including radial and angular instabilities.
- Identified surface screening charge dynamics as a critical factor influencing domain morphology.
- Observed anomalous polarization switching against the applied electric field (ionic field effect).
Conclusions:
- Ferroelectric domain switching is more complex than previously modeled, with significant influence from surface screening.
- Surface charge dynamics can dictate domain morphology and lead to unexpected switching phenomena.
- This work offers new insights into ferroelectric behavior and potential applications in advanced electronic devices.
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