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Updated: Apr 26, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Atomic layer deposition of a MoS₂ film
Lee Kheng Tan1, Bo Liu, Jing Hua Teng
1Department of Chemistry and Graphene Research Centre, National University of Singapore, 3 Science Drive 3, Singapore 117543. chmlohkp@nus.edu.sg.
Abstract:
A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.

