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Composition and crystal structure of N doped TiO2 film deposited at different O2 flow rate by direct current
Wanyu Ding1, Dongying Ju2, Weiping Chai3
1School of Material Science and Engineering, Dalian Jiaotong University, Dalian 116028, China; Engineering Research Center of Optoelectronic Materials & Devices, Education Department of Liaoning Province, Dalian 116028, China; Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
Abstract:
N doped Ti02 films were deposited by direct current pulse magnetron sputtering system at room temperature. The influence of 02 flow rate on the crystal structure of deposited films was studied by Stylus profilometer, X-ray photoelectron spectroscopy, and X-ray diffractometer. The results indicate that the 02 flow rate strongly controls the growth behavior and crystal structure of N doped Ti02 film. It is found that N element mainly exists as substitutional doped state and the chemical stiochiometry is near to TiO1.68±0.06N0.11±0.01 for all film samples. N doped Ti02 film deposited with 2 sccm (standard-state cubic centimeter per minute) 02 flow rate is amorphous structure with high growth rate, which contains both anatase phase and rutile phase crystal nucleuses. In this case, the film displays the mix-phase of anatase and rutile after annealing treatment. While N doped Ti02 film deposited with 12 cm(3)/min 02 flow rate displays anatase phase before and after annealing treatment. And it should be noticed that no TiN phase appears for all samples before and after annealing treatment.
