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THz-wave generation via difference frequency mixing in strained silicon based waveguide utilizing its second order
Optics Express
|August 5, 2014
Summary
This study explores terahertz (THz) wave generation using strained silicon waveguides. By inducing strain, silicon exhibits nonlinear properties, enabling efficient THz output for photonic applications.
Area of Science:
- Photonics and Materials Science
- Optoelectronics and Nonlinear Optics
Background:
- Terahertz (THz) wave generation is crucial for advanced spectroscopy and imaging.
- Silicon photonics offers a scalable platform, but lacks intrinsic second-order nonlinear optical properties.
- Breaking silicon's crystal symmetry is necessary to enable nonlinear optical processes like difference frequency mixing (DFM).
Purpose of the Study:
- To theoretically investigate terahertz (THz) wave generation in strained silicon membrane waveguides.
- To explore the use of silicon nitride (Si3N4) straining layers to induce anisotropy and nonlinear susceptibility.
- To propose waveguide structures for efficient THz generation via DFM.
Main Methods:
- Theoretical investigation of THz wave generation using the difference frequency mixing (DFM) process.
- Modeling of strained silicon membrane waveguides with Si3N4 straining layers.
- Utilizing modal birefringence in the waveguide core for THz generation.
Main Results:
- Anisotropic compressive strain in the silicon core was induced by the Si3N4 straining layer.
- The strain broke crystal symmetry, enabling bulk second-order nonlinear susceptibility (χ((2))).
- Simulations predicted an output power of up to 0.95 mW at 9.09 THz.
Conclusions:
- Strained silicon waveguides can effectively generate THz waves via DFM.
- The proposed approach demonstrates a viable route for silicon-based active THz photonic devices.
- This research opens possibilities for integrated silicon photonic systems in the THz range.
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