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Large-area monolayer hexagonal boron nitride on Pt foil
Ji-Hoon Park1, Jin Cheol Park, Seok Joon Yun
1Department of Energy and Materials Engineering and Advanced Energy and Electronic Materials Research Center (AEEMRC), Dongguk University-Seoul , Seoul 100-715, Republic of Korea.
ACS Nano
|August 6, 2014
Summary
Large-area, uniform hexagonal boron nitride (h-BN) films were grown on platinum foil using chemical vapor deposition. This breakthrough enables high-quality h-BN for advanced electronic and optoelectronic applications.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Hexagonal boron nitride (h-BN) is a key material for 2D electronics, tunneling devices, and heterostructures.
- Achieving large-area, uniform h-BN films remains a significant challenge in materials synthesis.
Purpose of the Study:
- To systematically investigate the growth of h-BN on platinum (Pt) foil.
- To develop a method for producing large-area, uniform monolayer h-BN films.
- To understand the influence of growth parameters on h-BN film characteristics.
Main Methods:
- Low-pressure chemical vapor deposition (LPCVD) using a borazine source on Pt foil.
- Catalytic decomposition of borazine on the Pt surface.
- Polarizing optical microscopy (POM) with nematic liquid crystal (LC) film for domain orientation analysis.
Main Results:
- Achieved uniform monolayer h-BN film over a 2 × 5 cm(2) Pt foil at <100 mTorr.
- Demonstrated self-limiting monolayer growth, similar to graphene on copper.
- Identified Pt crystallographic orientation and pressure as critical for thickness control (e.g., thick on Pt(111), thin on Pt(001)).
Conclusions:
- Developed a reliable method for large-area, uniform monolayer h-BN synthesis on Pt.
- The findings are crucial for advancing high-quality h-BN applications in electronics and heterostructures.
- Controlled growth conditions enable tunable h-BN film thickness.
