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The enhancing effects of group V σ-hole interactions on the F···O halogen bond
Wei Li1, Yanli Zeng, Xueying Zhang
1Institute of Computational Quantum Chemistry, College of Chemistry and Material Science, Hebei Normal University, Shijiazhuang 050024, P. R. China. yanlizengs@163.com menglp@hebtu.edu.cn.
Abstract:
The σ-hole interaction, which occurs between the covalent IV-VII atoms and nucleophilic substances, has become a hot issue of weak interaction. In this work, NCF···O=PX3···(NCF)n (X = F, Cl, Br, H, CH3·; n = 0, 1, 2) complexes were constructed and studied based on the second-order Møller-Plesset perturbation theory (MP2) calculations to investigate the enhancing effects of group V σ-hole interactions on the F···O halogen bond. With increasing n, the FO halogen bond becomes stronger, indicating that the group V σ-hole interactions could enhance the F···O halogen bond. As the capacity of donating electrons of X increases, the most negative electrostatic potentials outside the oxygen atom of O=PX3···(NCF)n (n = 0, 1, 2) become more negative, resulting in a stronger F···O halogen bond. In the formation of a F···O halogen bond, along the sequence of X = F, Cl, Br, H, CH3 of the negative sites O=PX3, the electric field of the lone pair of oxygen becomes greater and causes a larger decrease in electron density outside the fluorine atom. On the other hand, with increasing n from 0 to 2, the group V σ-hole interactions also increase the electric field of lone pair of oxygen and results in a larger decrease in electron density outside the fluorine atom.
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