Related Experiment Video
Updated: Apr 25, 2026

Picometer-Precision Atomic Position Tracking through Electron Microscopy
Published on: July 3, 2021
A reversible conversion between a skyrmion and a domain-wall pair in a junction geometry
11] Department of Physics, University of Hong Kong, Hong Kong, P.R. China [2] Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, P.R. China.
This study demonstrates converting between skyrmions and domain walls in spintronics. This enables hybrid devices combining skyrmions and domain walls for advanced memory applications.
Area of Science:
- Spintronics
- Condensed Matter Physics
- Materials Science
Background:
- Skyrmions are crucial for next-generation spintronics, termed 'skyrmionics'.
- Domain walls are used in established memory devices.
- A hybrid approach could leverage the benefits of both technologies.
Purpose of the Study:
- To demonstrate the conversion between skyrmions and domain walls.
- To enable information transfer between skyrmion and domain-wall-based devices.
- To lay the groundwork for novel hybrid spintronic memory devices.
Main Methods:
- Connecting wide and narrow nanowires to facilitate conversion.
- Utilizing functional control of skyrmions.
- Developing a read-out mechanism via skyrmion-to-domain-wall conversion.
Main Results:
- Successful conversion between skyrmions and domain-wall pairs was achieved.
- Information transmission between skyrmion and domain-wall devices is now possible.
- A pathway for hybrid device integration was established.
Conclusions:
- The conversion capability is the basis for hybrid skyrmion-domain wall devices.
- These hybrid devices offer potential advantages over current domain-wall racetrack memory.
- This research advances spintronics applications by merging distinct memory technologies.
More Related Videos
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
05:39Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Related Concept Videos
Woodward–Hoffmann Selection Rules and Microscopic Reversibility
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
Path Between Thermodynamics States
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Reversible and Irreversible Processes