Bandgap-engineered CdxZn1-xO nanowires as active regions for green-light-emitting diodes
Boya Lai1, Zuxin Chen, Junming Zhang
1State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
Abstract:
A green-light-emitting diode device was fabricated based on a p-type Sb-doped ZnO segments/Cd-alloyed ZnO/n-type ZnO film/heteronanowires array structure. The structures and chemical components of the heteronanowire sample were studied by energy dispersive spectrometer, x-ray photoelectron spectrometer, etc, from which the statuses of Cd and Sb in the sample were confirmed. Spatially resolved photoluminescence measurement on a single heteronanowire revealed a large bandgap shift in the Cd(x)Zn(1 - x)O active region. In electroluminescence characterizations, the device showed that the green emission was centered at 550 nm, suggesting the successful formation and functioning of the double heterojunction nanowire light-emitting diodes.
