Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

1.8K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.8K
Biasing of FET01:22

Biasing of FET

1.0K
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
1.0K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K
Induced Electric Fields: Applications01:27

Induced Electric Fields: Applications

2.7K
An important distinction exists between the electric field induced by a changing magnetic field and the electrostatic field produced by a fixed charge distribution. Specifically, the induced electric field is nonconservative because it does not work in moving a charge over a closed path. In contrast, the electrostatic field is conservative and does no net work over a closed path. Hence, electric potential can be associated with the electrostatic field but not the induced field. The following...
2.7K
Electromotive Force01:02

Electromotive Force

5.7K
Electromotive force (emf) is the force that causes current to flow from a higher to a lower  potential. The term "electromotive force" is used for historical reasons, even though emf is not a force at all.
Any circuit with a constant current must contain an emf-producing source. Examples of emf sources include batteries, electric generators, solar cells, thermocouples, and fuel cells. All these sources transform energy of some kind (mechanical, chemical, thermal, and so on)...
5.7K
Electromotive Force02:36

Electromotive Force

23.1K
Electricity is generated by either electrons or ions flowing through a solution or a conducting medium. This flow of electrons or specifically electrical charge is defined as an electric current. When electrons move through a wire, they generate an electric current. It can be recalled that in a redox reaction, electrons are lost and gained. In the spontaneous redox reaction of zinc with copper, when zinc is immersed in a copper ion solution, a transfer of electrons from one substance to...
23.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Green synthesis of AgNPs and their application in chitosan/polyvinyl alcohol/AgNPs composite sponges with efficient antibacterial activity for wound healing.

International journal of biological macromolecules·2025
Same author

Carbon Nanotube Films with Fewer Impurities and Higher Conductivity from Aqueously Mono-Dispersed Solution via Two-Step Filtration for Electric Heating.

Nanomaterials (Basel, Switzerland)·2024
Same author

Ultrasonication-Tailored Graphene Oxide of Varying Sizes in Multiple-Equilibrium-Route-Enhanced Adsorption for Aqueous Removal of Acridine Orange.

Molecules (Basel, Switzerland)·2023
Same author

Composition engineering of perovskite absorber assisted efficient textured monolithic perovskite/silicon heterojunction tandem solar cells.

RSC advances·2023
Same author

Self-Powered Electrostatic Adsorption Face Mask Based on a Triboelectric Nanogenerator.

ACS applied materials & interfaces·2018
Same author

Piezotronic Effect in Polarity-Controlled GaN Nanowires.

ACS nano·2015

Related Experiment Video

Updated: Apr 25, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

7.3K

Contact electrification field-effect transistor.

Chi Zhang, Wei Tang, Limin Zhang

    ACS Nano
    |August 15, 2014
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed a novel contact electrification field-effect transistor (CE-FET) controlled by external force. This device uses triboelectricity to modulate semiconductor behavior, opening new avenues for electronic applications.

    More Related Videos

    Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization
    06:58

    Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization

    Published on: July 12, 2016

    9.1K
    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
    10:36

    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

    Published on: April 12, 2018

    10.6K

    Related Experiment Videos

    Last Updated: Apr 25, 2026

    Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
    08:43

    Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

    Published on: November 7, 2016

    7.3K
    Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization
    06:58

    Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization

    Published on: July 12, 2016

    9.1K
    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
    10:36

    Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

    Published on: April 12, 2018

    10.6K

    Area of Science:

    • Materials Science
    • Nanoscience
    • Semiconductor Physics

    Background:

    • Traditional field-effect transistors rely on external gate voltage for control.
    • Piezotronic devices utilize strain-induced polarization, limiting material choices and sensing range.

    Purpose of the Study:

    • To demonstrate a novel field-effect transistor controlled by contact electrification (CE-FET).
    • To explore the potential of triboelectricity for modulating semiconductor device performance.
    • To propose a new field of 'tribotronics'.

    Main Methods:

    • Coupling a metal oxide semiconductor field-effect transistor (MOSFET) with a triboelectric nanogenerator (TENG).
    • Utilizing vertical contact electrification between a gate material and an external object to create an electrostatic potential.
    • Investigating carrier transport modulation by contact-induced potential instead of traditional gate voltage.

    Main Results:

    • Demonstrated external force-triggered/controlled CE-FET operation.
    • Observed significant changes in drain current (e.g., 13.4 to 1.9 μA in depletion mode) by contact electrification.
    • Showcased expanded sensing range and material compatibility compared to piezotronic devices.

    Conclusions:

    • The CE-FET offers a new mechanism for controlling semiconductor devices using triboelectric effects.
    • This technology has potential applications in advanced sensors, human-silicon interfaces, MEMS, nanorobotics, and flexible electronics.
    • The proposed field of tribotronics, coupling triboelectricity, semiconductors, and photoexcitation, promises future research directions.