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Enhancing the brightness of Si nanocrystal light-emitting devices with electro-excited surface plasmons
Jia-Rong Chen1, Zhi-Quan Zhou, Hong-Chen Hao
1Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, People's Republic of China. School of Information Engineering, Guizhou Min Zu University, Guiyang 550025, People's Republic of China.
Abstract:
The use of electro-excited surface plasmons (SPs) in Ag nanoparticles (Ag-NPs) is shown to enhance the brightness of Si nanocrystal light-emitting devices (Si-NC LEDs). The Ag-NPs are prepared on the Si-NC thin film by ultrasonic irradiation and postannealing treatments. Electro-excited SPs on Ag-NPs are found, which are induced by electron impact on Ag-NPs and the front electrode Al layer during the charge injection process of LED. The electro-excited SPs enhance the electroluminescence of Si-NC, or LED brightness, via the SP field coupling to the exciton dipole moment of Si-NC. A maximal 5.2-fold brightness enhancement of Si-NC LED is achieved at the postannealing temperature of 200 °C. Remnant far-field radiations arising from electro-excited SPs are detected, which further supports the existence of such SPs.
