Heterogeneously integrated III-V-on-silicon multibandgap superluminescent light-emitting diode with 290 nm optical...

Area of Science:

• Photonics
• Materials Science
• Semiconductor Devices

Background:

• Broadband light sources are crucial for applications like optical sensing and communications.
• Integrating III-V materials with silicon photonics offers advantages in performance and scalability.
• Existing silicon-based light sources often lack sufficient bandwidth for advanced applications.

Purpose of the Study:

• To realize a broadband superluminescent III-V-on-silicon light-emitting diode (LED).
• To achieve a large optical bandwidth using novel integration techniques.
• To demonstrate a functional on-chip light source for integrated photonic circuits.

Main Methods:

• Fabrication of a III-V-on-silicon LED utilizing quantum well intermixing (QWI).
• Integration of multiple InP die bonds onto a silicon photonic waveguide circuit.
• Design of a four-section device with varying bandgaps (1300-1540 nm) for broadband emission.
• Serial on-chip connection of LED sections to enable light propagation through different bandgaps.

Main Results:

• Successful realization of a broadband superluminescent III-V-on-silicon LED.
• Achieved a 3 dB optical bandwidth of 292 nm.
• Obtained an on-chip optical power of -8 dBm.
• Demonstrated the novel combination of QWI and multiple InP die bonding for bandwidth enhancement.

Conclusions:

• The developed III-V-on-silicon LED represents a significant advancement in broadband light source technology.
• The combined approach of QWI and die bonding is effective for achieving wide bandwidths on silicon.
• This device holds promise for future integrated photonic systems requiring broad spectral coverage.