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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction

Zhengzhong Zhang1, Liang Jiang

  • 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China.

Nanotechnology
|August 15, 2014
PubMed

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