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High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors
Nanotechnology
|August 21, 2014
Summary
Few-layered molybdenum diselenide (MoSe2) phototransistors demonstrate high sensitivity for optoelectronic applications. These devices exhibit ultrahigh photoresponsivity and external quantum efficiency at room temperature.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Few-layered transition metal dichalcogenides (TMDs) like MoSe2 are promising for next-generation electronic and optoelectronic devices.
- Phototransistors are key components in optoelectronic systems, requiring high sensitivity and efficiency.
Purpose of the Study:
- To fabricate and characterize high-sensitivity phototransistors using few-layered MoSe2.
- To investigate the optoelectronic properties, including photoresponsivity and external quantum efficiency (EQE), of these MoSe2-based devices.
Main Methods:
- Fabrication of back-gated field-effect transistors (FETs) using few-layered MoSe2.
- Measurement of device mobility at room temperature.
- Characterization of optoelectronic performance under 532 nm laser excitation.
Main Results:
- Achieved a mobility of 19.7 cm² V⁻¹ s⁻¹ at room temperature.
- Obtained an ultrahigh photoresponsivity of 97.1 AW⁻¹.
- Recorded an exceptional external quantum efficiency (EQE) of 22,666%.
Conclusions:
- Few-layered MoSe2 phototransistors exhibit excellent optoelectronic properties, including high photoresponsivity and EQE.
- Device performance is influenced by gate voltage and gate oxide choice, with silicon dioxide presenting a limitation.
- These MoSe2-based devices hold significant promise for advanced photoelectronic applications.
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