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Disordered weak and strong topological insulators.

Koji Kobayashi1, Tomi Ohtsuki1, Ken-Ichiro Imura2

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Disorder effects on topological insulators reveal unexpected conductance quantization at phase boundaries. The study identifies two distinct subregions within the weak topological insulator phase, characterized by robust or defeated surface states.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Quantum mechanics

Background:

  • Disordered topological insulators exhibit complex phase diagrams.
  • The topological Anderson insulator is a known phenomenon where disorder localizes states.
  • Understanding disorder's impact on topological phases is crucial for material design.

Purpose of the Study:

  • To establish a global phase diagram for disordered weak and strong topological insulators.
  • To investigate the unexpected robustness of conductance peaks against disorder.
  • To explore the emergence of distinct subregions within the weak topological insulator phase.

Main Methods:

  • Numerical simulations to establish the phase diagram.
  • Analysis of conductance peak quantization.
  • Investigation of surface state behavior using size dependence.
  • Lyapunov exponent calculations to reveal the nature of subregions.

Main Results:

  • A global phase diagram for disordered topological insulators was numerically established.
  • Unexpected quantization of conductance peaks at phase boundaries, showing robustness against disorder.
  • Emergence of two subregions in the weak topological insulator phase under disorder.
  • Identification of robust and 'defeated' surface states within these subregions based on conductance.

Conclusions:

  • Disorder plays a significant role in renormalizing phase boundaries of topological insulators.
  • The observed conductance quantization highlights a novel robustness against disorder.
  • The two distinct subregions in the weak topological insulator phase represent different surface state behaviors under disorder.