Related Experiment Video
Updated: Apr 24, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Selective metal deposition at graphene line defects by atomic layer deposition
Kwanpyo Kim1, Han-Bo-Ram Lee2, Richard W Johnson3
11] Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA [2] Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea [3].
Abstract:
One-dimensional defects in graphene have a strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene's line defects, notably grain boundaries, by atomic layer deposition. Atomic layer deposition allows us to deposit Pt predominantly on graphene's grain boundaries, folds and cracks due to the enhanced chemical reactivity of these line defects, which is directly confirmed by transmission electron microscopy imaging. The selective functionalization of graphene defect sites, together with the nanowire morphology of deposited Pt, yields a superior platform for sensing applications. Using Pt-graphene hybrid structures, we demonstrate high-performance hydrogen gas sensors at room temperature and show its advantages over other evaporative Pt deposition methods, in which Pt decorates the graphene surface non-selectively.

