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Published on: July 24, 2021
Defects in GaSe grown by Bridgman method
K A Kokh1, V V Atuchin, T A Gavrilova
1Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia; Novosibirsk State University, Novosibirsk, Russia; Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia.
Abstract:
Optical quality GaSe crystals have been grown by vertical Bridgman method. The structural properties and micromorphology of a cleaved GaSe(001) surface have been evaluated by RHEED, SEM and AFM. The cleaved GaSe(001) is atomically flat with as low roughness as ∼0.06 nm excepting local hillock type defects. The hillock-type formations are round-shaped with a bottom diameter of ∼200 nm and a height of ∼20-35 nm. The drastic depletion of the hillock material by gallium has been indicated by EDX measurements.
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