Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

109
Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
109
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

136
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
136
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

142
A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
142

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

[Peculiarities of sarcopenia in occupational chronic obstructive pulmonary disease in conditions of exposure of industrial aerosols containing nanoparticles].

Terapevticheskii arkhiv·2026
Same author

Phase transitions, Dirac and Weyl semimetal states in Mn<sub>1-x</sub>Ge<sub>x</sub>Bi<sub>2</sub>Te<sub>4</sub>.

Scientific reports·2025
Same author

Nonstoichiometry as a hidden aspect of TbAl<sub>3</sub>(BO<sub>3</sub>)<sub>4</sub> optical properties.

Dalton transactions (Cambridge, England : 2003)·2024
Same author

Build-up and dephasing of Floquet-Bloch bands on subcycle timescales.

Nature·2023
Same author

Ultrafast electron dynamics in a topological surface state observed in two-dimensional momentum space.

Scientific reports·2023
Same author

Negative thermal expansion and electronic structure variation of chalcopyrite type LiGaTe<sub>2</sub>.

RSC advances·2022

Related Experiment Video

Updated: Apr 24, 2026

Performing In Situ Closed-Cell Gas Reactions in the Transmission Electron Microscope
14:21

Performing In Situ Closed-Cell Gas Reactions in the Transmission Electron Microscope

Published on: July 24, 2021

3.5K

Defects in GaSe grown by Bridgman method.

K A Kokh1, V V Atuchin, T A Gavrilova

  • 1Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia; Novosibirsk State University, Novosibirsk, Russia; Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia.

Journal of Microscopy
|September 4, 2014
PubMed
Summary

High-quality Gallium Selenide (GaSe) crystals were grown and their surfaces analyzed. The cleaved GaSe(001) surface exhibits atomic flatness with minimal roughness, though some localized hillock defects were observed.

Keywords:
AFMGaSeRHEEDSEMcrystal growth

More Related Videos

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.4K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

Related Experiment Videos

Last Updated: Apr 24, 2026

Performing In Situ Closed-Cell Gas Reactions in the Transmission Electron Microscope
14:21

Performing In Situ Closed-Cell Gas Reactions in the Transmission Electron Microscope

Published on: July 24, 2021

3.5K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.4K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Crystal Growth

Background:

  • Gallium Selenide (GaSe) is a promising optoelectronic material.
  • Understanding surface morphology is crucial for device applications.

Purpose of the Study:

  • To grow optical quality GaSe crystals using the vertical Bridgman method.
  • To characterize the structural properties and surface micromorphology of cleaved GaSe(001).

Main Methods:

  • Vertical Bridgman method for crystal growth.
  • Reflection High-Energy Electron Diffraction (RHEED) for structural analysis.
  • Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) for surface morphology.
  • Energy-Dispersive X-ray (EDX) spectroscopy for elemental analysis.

Main Results:

  • Atomically flat GaSe(001) surfaces achieved with roughness as low as ~0.06 nm.
  • Identified localized hillock-type defects with specific dimensions (diameter ~200 nm, height ~20-35 nm).
  • EDX analysis revealed significant gallium depletion in the hillock regions.

Conclusions:

  • The vertical Bridgman method yields high-quality GaSe crystals suitable for surface studies.
  • The observed surface flatness is promising for optoelectronic applications.
  • The nature of hillock defects requires further investigation for material optimization.