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Updated: Apr 24, 2026
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Iron (III) chloride doping of CVD graphene
Yi Song1, Wenjing Fang, Allen L Hsu
1Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Abstract:
Chemical doping has been shown as an effective method of reducing the sheet resistance of graphene. We present the results of our investigations into doping large area chemical vapor deposition graphene using Iron (III) Chloride (FeCl(3)). It is shown that evaporating FeCl(3) can increase the carrier concentration of monolayer graphene to greater than 10(14) cm(-2) and achieve resistances as low as 72 Ω sq(-1). We also evaluate other important properties of the doped graphene such as surface cleanliness, air stability, and solvent stability. Furthermore, we compare FeCl(3) to three other common dopants: Gold (III) Chloride (AuCl(3)), Nitric Acid (HNO(3)), and TFSA ((CF(3)SO(2))(2)NH). We show that compared to these dopants, FeCl(3) can not only achieve better sheet resistance but also has other key advantages including better solvent stability.
