Improved Thin-Film Transistor Performance Through a Melt of Poly(para-phenyleneethynylene)

The performance of polymer field-effect transistors (PFETs) based on short rigid rod semiconducting poly(2,5-didodecyloxy-p-phenyleneethynylene) (D-OPPE) is highlighted. The controlled heating and cooling of thin films of D-OPPE allows for a recrystallization from the melt, boosting the performance of D-OPPE-based transistors. The improved film properties induced by controlled annealing lead to a hole field-effect mobility around 0.014 cm² V^-1 s^-1 , an on/off ratio of 10⁶ , a sub-threshold swing of 3 V dec^-1 and a threshold voltage of -35 V, employing a poly(methyl methacrylate) (PMMA) gate dielectric. Thus, PFETs out of D-OPPE compete now with spin-coated, polycrystalline poly(3-hexylthiophene)-based PFETs.