Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers
Michael S Bresnehan1, Ganesh R Bhimanapati, Ke Wang
1Department of Materials Science and Engineering, ‡Electro-Optics Center, §Center for 2-Dimensional and Layered Materials, ∥Materials Research Institute, and ⊥Department of Chemical Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States.
Abstract:
Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains a vapor-phase copper overpressure during growth. Compared to h-BN films grown without a copper overpressure, this process results in a >10× reduction of 3-dimensional BN fullerene-like surface features, a reduction of carbon and oxygen contamination of 65% and 62%, respectively, an increase in h-BN grain size of >2×, and an 89% increase in electrical breakdown strength.
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