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Updated: Apr 24, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films
Cheng Zhang1, Xiang Yuan, Kai Wang
1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China.
Abstract:
High-quality thin films of the topological insulator Bi2-xSbxSe3 are grown by molecular beam epitaxy. A metal-insulator transition along with strong surface states - revealed by Shubnikov-de Haas oscillations - is observed as the Sb concentration is increased. This system represents a widely tunable platform for achieving high surface conduction, suppressing the bulk influence, and manipulating the band structure of topological insulators.
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