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Polycrystalline graphene with single crystalline electronic structure.

Lola Brown1, Edward B Lochocki, José Avila

  • 1Department of Chemistry and Chemical Biology, ‡Department of Physics, Laboratory of Atomic and Solid State Physics, ⊥School of Applied and Engineering Physics, and #Kavli Institute at Cornell for Nanoscale Science, Cornell University , Ithaca, New York 14853, United States.

Nano Letters
|September 11, 2014
PubMed
Summary

We developed a scalable method for growing aligned graphene and hexagonal boron nitride films on copper. These versatile materials enable large-scale heterostructures with tunable optoelectronic properties for advanced applications.

Keywords:
Grapheneangle-resolved photoemission spectroscopyartificial twisted bilayerdark-field transmission electron microscopyhexagonal boron nitride

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Aligned 2D materials are crucial for advanced electronic and optoelectronic devices.
  • Scalable synthesis of high-quality graphene and hexagonal boron nitride remains a challenge.

Purpose of the Study:

  • To report a scalable growth method for aligned graphene and hexagonal boron nitride films.
  • To demonstrate the utility of these films as building blocks for heterostructures.

Main Methods:

  • Growth of aligned graphene and hexagonal boron nitride on commercial copper foils via multiple nucleation sites.
  • Characterization using techniques to assess crystallographic and electronic uniformity.
  • Fabrication of artificial twisted graphene bilayers.

Main Results:

  • Achieved scalable growth of single-oriented graphene and hexagonal boron nitride films.
  • Demonstrated uniform crystallographic and electronic structures over large areas (cm-scale).
  • Successfully created twisted graphene bilayers with angle-tunable optoelectronic properties.

Conclusions:

  • The developed method provides inexpensive and versatile films for large-scale applications.
  • These materials are ideal for constructing heterostructures with tunable optoelectronic characteristics.
  • The findings pave the way for advanced layered electronic and photonic devices.