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Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility
Rui Yang1, Zenghui Wang, Philip X-L Feng
1Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA. philip.feng@case.edu.
Nanoscale
|September 16, 2014
Summary
Multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) exhibit high breakdown current and on/off ratios. These MoS2 FETs show promise for applications needing superior carrier mobility and power handling.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Molybdenum disulfide (MoS2) is a promising 2D material for next-generation electronics.
- Understanding electrical breakdown in MoS2-based field-effect transistors (FETs) is crucial for device reliability and performance.
- Previous studies have focused on single-layer MoS2, leaving multilayer characteristics less explored.
Purpose of the Study:
- To experimentally investigate and model electrical breakdown in multilayer MoS2 FETs.
- To determine the impact of device parameters on carrier mobility and current carrying capacity.
- To assess the potential advantages of multilayer MoS2 FETs over single-layer devices for circuit applications.
Main Methods:
- Fabrication and characterization of MoS2 FETs with varying thicknesses (5.7 nm to 77 nm).
- Electrical breakdown measurements to determine breakdown current and on/off ratios.
- Experimental and analytical exploration of device parameters influencing carrier mobility.
- Device simulations to model electrical breakdown and parameter dependencies.
Main Results:
- Achieved a breakdown current of 1.2 mA, mobility of 42 cm(2) V(-1) s(-1), and an on/off current ratio of approximately 10(7) in multilayer MoS2 FETs.
- Established the dependence of breakdown current on MoS2 thickness, channel length, and conductivity.
- Identified key device parameters affecting carrier mobility and current carrying capacity.
Conclusions:
- Multilayer MoS2 FETs demonstrate significant potential for high-performance electronic applications.
- These devices offer advantages in terms of carrier mobility and power handling compared to single-layer MoS2.
- The findings provide valuable insights for the design and optimization of MoS2-based electronic circuits.
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