Related Experiment Video
Updated: Jul 7, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Competitive growth mechanisms of AlN on Si (111) by MOVPE
Yuxia Feng1, Hongyuan Wei1, Shaoyan Yang1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
Abstract:
To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure.
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