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Band-selective infrared photodetectors with complete-composition-range InAs(x)P(1-x) alloy nanowires
Pinyun Ren1, Wei Hu, Qinglin Zhang
1Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan, 410082, P. R. China.
Abstract:
Band-selective infrared photodetectors (PDs) are constructed with InAs(x)P(1-x) alloy nanowires from the complete composition range (0 ≤ x ≤ 1) achieved by a new growth route combining the vapor-liquid-solid mechanism with an additional ion-exchange process. Increasing the composition x value from 0 to 1 in the PDs allows the peak response wavelength to be gradually tuned from ca. 900 to ca. 2900 nm.
