Preferential formation of Si-O-C over Si-C linkage upon thermal grafting on hydrogen-terminated silicon (111)
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Updated: Apr 23, 2026

Fabrication and Optimization of Type II Silicon Clathrate Films
Published on: October 14, 2025
Yit Lung Khung1, Siti Hawa Ngalim, Laura Meda
1Department of Materials Science, University of Milan-Bicocca, Via R. Cozzi 55, 20125 Milan (Italy), Fax: (+39) 02-6448-5400. yit.khung@unimib.it.
Abstract:
In a stringent and near oxygen-free environment, Si-H surfaces were introduced to a trifluoroalkyne, an alcohol-derivatized alkyne, as well as an equal mixture of both alkynes at a temperature of 130 °C. Contact angle measurements, high-resolution X-ray photoelectron spectroscopy (XPS), and angle-resolved XPS were performed to examine the system. Si-H surfaces were found to have a strong preference towards the formation of Si-O-C rather than Si-C bonds when the alcohol and alkyne reactivities were compared.
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