Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

896
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
896
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.3K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.3K
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K
P-N junction01:11

P-N junction

1.6K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.6K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Improper geometric ferroelectricity at the monolayer limit.

Science advances·2026
Same author

Evolution and Suppression of Spin Cycloid in Epitaxial BiFeO<sub>3</sub> Thin Films.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Superconducting phase diagram of multilayer square-planar nickelates.

Science (New York, N.Y.)·2026
Same author

Polar nano-regions enable large spin Hall conductivity in metallic PtCoO<sub>2</sub>.

Nature materials·2026
Same author

Revealing buried ferroelectric topologies by depth-resolved electron diffraction imaging.

Nature communications·2026
Same author

Author Correction: Magnon confinement in epitaxial antiferromagnetic oxide heterostructures.

Nature materials·2026

Related Experiment Video

Updated: Apr 23, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

12.7K

Hubbard gap modulation in vanadium dioxide nanoscale tunnel junctions.

Magdalena Huefner1, Ram Krishna Ghosh, Eugene Freeman

  • 1Department of Physics, Harvard University , Cambridge, Massachusetts 02138, United States.

Nano Letters
|October 1, 2014
PubMed
Summary

Researchers studied electronic transport in vanadium dioxide (VO2) thin films during their phase transition. This transition dramatically altered conductivity, collapsing the Hubbard gap and showing agreement with quantum mechanical models.

Keywords:
Atomic force microscopydensity functional theorymetal−insulator transitionnon-equilibrium Green’s functiontunnel junctionvanadium dioxide

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

8.3K

Related Experiment Videos

Last Updated: Apr 23, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

12.7K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

8.3K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Vanadium dioxide (VO2) exhibits a thermally induced insulator-to-metal phase transition.
  • Understanding electronic transport across this transition is crucial for novel electronic devices.

Purpose of the Study:

  • To investigate the electronic transport properties of individual tunnel junctions containing a 10 nm VO2 thin film.
  • To analyze the impact of the insulator-to-metal phase transition on tunnel conductance.

Main Methods:

  • Fabrication of individual tunnel junctions with a 10 nm VO2 thin film.
  • Experimental measurement of electronic transport across the VO2 phase transition.
  • Theoretical quantum mechanical transport calculations.

Main Results:

  • The insulator-to-metal phase transition in VO2 collapses the Hubbard gap, measured at 0.4 ± 0.07 V.
  • A significant change in tunnel conductance, spanning several orders of magnitude, was observed.
  • Theoretical calculations demonstrated excellent agreement with experimental findings.

Conclusions:

  • The study quantitatively evaluates the transport mechanisms governing the VO2 phase transition.
  • The findings provide a fundamental understanding of electronic transport in phase-transition materials.
  • This research supports the development of advanced electronic devices utilizing VO2 properties.