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Updated: Apr 23, 2026
Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
ZnO nanowires with Au contacts characterised in the as-grown real device configuration using a local multi-probe
Alex M Lord1, Alex S Walton, Thierry G Maffeis
1Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP, UK.
Abstract:
We demonstrate here a method using a multi-probe UHV instrument to isolate and measure individual metal contacts controllably fabricated on the tips of free standing ZnO nanowires (NWs). The measurements show Au can form reliable Ohmic and rectifying contacts by exercising control over the surface properties. In the as-grown state the Au contacts display low-resistance characteristics which are determined by the adsorbed species and defects on the NW surface. Subjecting the NWs to an oxidising agent (H2O2) increases the surface potential barrier creating more rectifying contacts. These developments are crucial for controllable NW array devices.
