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Updated: Apr 23, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Graphene spintronics
Wei Han1, Roland K Kawakami2, Martin Gmitra3
11] International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100871, China [3] IBM Almaden Research Center, San Jose, California 95120, USA.
Abstract:
The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material and of graphene-based spintronic devices. Here, we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene. Future research in graphene spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including topological states and proximity-induced phenomena in graphene and other two-dimensional materials.
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