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Updated: Apr 23, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
Published on: August 8, 2025
VHF NEMS-CMOS piezoresistive resonators for advanced sensing applications
Julien Arcamone1, Cécilia Dupré, Grégory Arndt
1Univ. Grenoble Alpes, F-38000 Grenoble, France. CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble, France.
Abstract:
This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association.

