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Updated: Apr 22, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Improving the field-effect performance of Bi2S3 single nanowires by an asymmetric device fabrication
Fangyuan Lu1, Renxiong Li, Yan Li
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing100083 (China).
Abstract:
High-quality Bi2 S3 nanowires are synthesized by chemical vapor deposition and their intrinsic photoresponsive and field-effect characteristics are explored in detail. Among the studied Au-Au, Ag-Ag, and Au-Ag electrode pairs, the device with stepwise band alignment of asymmetric Au-Ag electrodes has the highest mobility. Furthermore, it is shown that light can cause a sevenfold decrease of the on/off ratio. This can be explained by the photoexcited charge carriers that are more beneficial to the increase of Ioff than Ion . The photoresponsive properties of the asymmetric Au-Ag electrode devices were also explored, and the results show a photoconductive gain of seven with a rise time of 2.9 s and a decay time of 1.6 s.
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