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Multimode silicon nanowire transistors.

Sebastian Glassner1, Clemens Zeiner, Priyanka Periwal

  • 1Institute of Solid State Electronics, Vienna University of Technology , A-1040 Vienna, Austria.

Nano Letters
|October 11, 2014
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel silicon nanowire transistor with multiple operating modes. This device overcomes limitations of traditional transistors by enabling tunable carrier injection and transistor types through advanced biasing techniques.

Keywords:
Schottky barrier tunnelingSilicon nanowireband-to-band tunnelingdual-gatenickel silicidereconfigurable transistor

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Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Nanotechnology

Background:

  • Silicon Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) face limitations.
  • Nonplanar designs and nonconventional carrier injection are explored to overcome these limitations.

Purpose of the Study:

  • To present a multimode field effect transistor (FET) device using silicon nanowires.
  • To demonstrate tunable operation modes and carrier injection mechanisms.

Main Methods:

  • Fabrication of a silicon nanowire FET with an axial n-type/intrinsic doping junction.
  • Utilized a heterostructural design with a self-aligned nickel-silicide source contact.
  • Employed dual-gate biasing for polymorph operation (p-type and two n-type modes).

Main Results:

  • Demonstrated polymorph operation, allowing configuration of p-type and two n-type transistor modes.
  • Achieved tunable carrier injection modes by gate and drain bias adjustments.
  • In p-type mode, observed a subthreshold swing of 143 mV/dec and ON/OFF ratio up to 10^4 using band-to-band and Schottky tunneling.
  • In forward bias, realized a nonconventional tunneling transistor suppressing ambipolarity.
  • In n-type modes, achieved ON/OFF ratios up to 10^7 (forward bias, thermionic emission) and utilized Schottky tunneling (reverse bias).

Conclusions:

  • The developed silicon nanowire FET offers versatile multimode operation.
  • The device design and biasing strategies effectively control transistor type and carrier injection.
  • This work presents a promising approach for next-generation transistors beyond conventional MOSFET limitations.